Concepedia

Interface Trap Reduction

Interface Trap Reduction is a surface passivation strategy that specifically targets the minimization of electronic defect states at the semiconductor-dielectric interface, thereby enhancing carrier lifetime and interfacial electronic quality.

197

Publications

6.8K

Citations

977

Authors

256

Institutions

Publications per year

2017–2026

58

Parents

Publications

197

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

V. V. Afanas’ev, A. Stesmans, Florin Ciobanu et al. · Applied Physics Letters · 2003 · 197 citations

, , +17

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

J.-S. Park, Jie Bai, M. Curtin et al. · Applied Physics Letters · 2007 · 166 citations

, , +17

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 164 citations

, , +17

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

J. Z. Li, Jie Bai, Ji‐Sang Park et al. · Applied Physics Letters · 2007 · 153 citations

, , +17

Metal-Dependent Schottky Barrier Height with the (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-Treated GaAs

Jia-Fa Fan, Haruhiro Oigawa, Yasuo Nannichi · Japanese Journal of Applied Physics · 1988 · 147 citations

, , +17

1–5 of 197

Authors

977

  1. ST
    Shinichi Takagi

    The University of Tokyo, Japan

    8 publications · 374 citations

    8

    h-index

  2. MT
    Mitsuru Takenaka

    The University of Tokyo, Japan

    6 publications · 306 citations

    6

    h-index

  3. NT
    Noriyuki Taoka

    The University of Tokyo, Japan

    4 publications · 282 citations

    4

    h-index

  4. HY
    Hiroshi Yano

    Nara Institute of Science and Technology, Japan

    4 publications · 188 citations

    4

    h-index

  5. DO
    Dai Okamoto

    National Institute of Advanced Industrial Science and Technology, Japan

    3 publications · 172 citations

    3

    h-index

1–5 of 977

Institutions

256

  1. The University of Tokyo

    Tokyo, Japan

    10 h-index

    45 publications

    2.4K citations

  2. IMEC

    Leuven, Belgium

    8 h-index

    84 publications

    3.1K citations

  3. National Institute of Advanced Industrial Science and Technology

    Tsukuba, Japan

    7 h-index

    24 publications

    1.8K citations

  4. KU Leuven

    Leuven, Belgium

    6 h-index

    16 publications

    1.3K citations

  5. Chinese Academy of Sciences

    Beijing, China

    6 h-index

    31 publications

    645 citations

  6. Korea University

    Seoul, South Korea

    6 h-index

    29 publications

    782 citations

  7. Institute of Microelectronics

    Beijing, China

    5 h-index

    30 publications

    509 citations

  8. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    5 h-index

    14 publications

    1K citations

1–8 of 256

Venues

  1. Applied Physics Letters

    35 publications · 2.1K citations

    24

    h-index

  2. Journal of Applied Physics

    18 publications · 538 citations

    15

    h-index

  3. IEEE Transactions on Electron Devices

    15 publications · 432 citations

    13

    h-index

  4. IEEE Electron Device Letters

    14 publications · 515 citations

    12

    h-index

  5. Applied Physics Express

    APEX · 8 publications · 242 citations

    8

    h-index

1–5