InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO ₂ as gate dielectric

Abstract

Abstract In this letter, we present the electrical properties of the InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO 2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current ( I on / I off ) ratio of 1.46 × 10 9 as well as a subthreshold swing of 85 mV/dec was achieved. The interface trap density ( D it ) decreased from 1.16 × 10 12 eV −1 cm −2 (at E C − E T = 0.26 eV) to 4.68 × 10 11 eV −1 cm −2 (at E C − E T = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO 2 /InAlN/GaN MISHEMTs.