Concepedia

Lincheng Wei

LW

4

Publications

56

Citations

4

H-Index

2013

Active since

Affiliations

University of Delaware(Current)

Lincheng Wei is an author at University of Delaware specializing in power electronics, applied physics, and engineering.

ORCID

Top concepts

Publications per year

2013–2020

4

Publications

4

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO <sub>2</sub> as gate dielectric

Peng Cui, Jie Zhang, Meng Jia et al. · Japanese Journal of Applied Physics · 2020 · 16 citations

Effects of N <sub>2</sub> O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Peng Cui, Jie Zhang, Tzu‐Yi Yang et al. · Journal of Physics D Applied Physics · 2019 · 15 citations

Performance enhancement of monolayer MoS <sub>2</sub> transistors by atomic layer deposition of high- <i>k</i> dielectric assisted by Al <sub>2</sub> O <sub>3</sub> seed layer

Guangyang Lin, Meng‐Qiang Zhao, Meng Jia et al. · Journal of Physics D Applied Physics · 2019 · 14 citations

Gate length related transfer characteristics of GaN-based high electron mobility transistors

X. F. Zhang, Lincheng Wei, L. Wang et al. · Applied Physics Letters · 2013 · 11 citations

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