Impact of leakage current in germanium channel based DMDG TFET using drain-gate underlap technique

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Woo Young Choi, Byung‐Gook Park, Jong Duk Lee et al. · IEEE Electron Device Letters · 2007 · 1.9K citations

Engineering, Electrical Engineering, Microelectronics +16

Double-Gate Tunnel FET With High- Gate Dielectric

Kathy Boucart, Adrian Ionescu · IEEE Transactions on Electron Devices · 2007 · 1.7K citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan et al. · 2008 · 491 citations

Engineering, Electrical Engineering, Physics +17

Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor

Sneh Saurabh, M. Jagadesh Kumar · IEEE Transactions on Electron Devices · 2011 · 473 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst, William G. Vandenberghe, Karen Maex et al. · Applied Physics Letters · 2007 · 432 citations · Full text

Engineering, Electrical Engineering, Materials Science +15