Concepedia

Leakage Current Reduction

Leakage Current Reduction is a methodological approach in integrated circuit device design that minimizes unintended subthreshold and gate leakage currents through structural, material, or operational optimizations, distinguishing it from other scaling-enhancement techniques by specifically targeting parasitic current pathways in nanoscale transistors.

2.2K

Publications

89.4K

Citations

9.2K

Authors

1.1K

Institutions

Publications per year

2017–2026

491

Parents

Publications

2.2K

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Kaushik Roy, Subhas Chandra Mukhopadhyay, Hamid Mahmoodi · Proceedings of the IEEE · 2003 · 2.3K citations

, , +17

MoS<sub>2</sub>transistors with 1-nanometer gate lengths

Sujay B. Desai, Surabhi R. Madhvapathy, Angada B. Sachid et al. · Science · 2016 · 1.5K citations · Full text

, , +17

Scaling the Si MOSFET: from bulk to SOI to bulk

Ran Yan, A. Ourmazd, K.F. Lee · IEEE Transactions on Electron Devices · 1992 · 897 citations

, , +17

Gated-V<sub>dd</sub>

Michael D. Powell, Se-Hyun Yang, Babak Falsafi et al. · 2000 · 669 citations · Full text

, , +17

Silicon Device Scaling to the Sub-10-nm Regime

M. Ieong, B. Doris, J. Kedzierski et al. · Science · 2004 · 573 citations

, , +17

1–5 of 2.2K

Authors

9.2K

  1. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    46 publications · 5.4K citations

    27

    h-index

  2. MJ
    M. Jagadesh Kumar

    Indian Institute of Technology Delhi, India

    24 publications · 1.3K citations

    20

    h-index

  3. SB
    Shekhar Borkar

    Intel (United States), United States

    19 publications · 1.8K citations

    17

    h-index

  4. VK
    Volkan Kursun

    University of Wisconsin–Madison, United States

    15 publications · 839 citations

    14

    h-index

  5. VK
    Vijay Kumar Sharma

    Shri Mata Vaishno Devi University, India

    13 publications · 454 citations

    13

    h-index

1–5 of 9.2K

Institutions

1.1K

  1. Intel (United States)

    Santa Clara, United States

    42 h-index

    433 publications

    32.9K citations

  2. Purdue University West Lafayette

    West Lafayette, United States

    35 h-index

    191 publications

    20.1K citations

  3. IBM (United States)

    Armonk, United States

    31 h-index

    568 publications

    34.6K citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    26 h-index

    213 publications

    5.4K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    26 h-index

    203 publications

    15.3K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    24 h-index

    367 publications

    15.1K citations

  7. University of California, Berkeley

    Berkeley, United States

    24 h-index

    157 publications

    24.5K citations

  8. Massachusetts Institute of Technology

    Cambridge, United States

    24 h-index

    112 publications

    9.5K citations

1–8 of 1.1K

Venues

  1. IEEE Transactions on Electron Devices

    222 publications · 10.6K citations

    52

    h-index

  2. IEEE Electron Device Letters

    183 publications · 9.1K citations

    52

    h-index

  3. Applied Physics Letters

    94 publications · 4.9K citations

    38

    h-index

  4. IEEE Journal of Solid-State Circuits

    45 publications · 2.9K citations

    30

    h-index

  5. 24

    h-index

1–5