D. Nirmal

A survey of Gallium Nitride HEMT for RF and high power applications

A.S. Augustine Fletcher, D. Nirmal · Superlattices and Microstructures · 2017 · 272 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, Shubham Tayal et al. · Microelectronics Journal · 2021 · 101 citations

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon et al. · Physica E Low-dimensional Systems and Nanostructures · 2016 · 81 citations

Low-power Electronics, Electrical Engineering, Nanoscale System +10

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

A.S. Augustine Fletcher, D. Nirmal, J. Ajayan et al. · AEU - International Journal of Electronics and Communications · 2018 · 81 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

J. Ajayan, D. Nirmal, P. Prajoon et al. · AEU - International Journal of Electronics and Communications · 2017 · 73 citations

High Speed Applications, High-k Dielectrics, Electrical Engineering +9