Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 720 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Shreepad Karmalkar, Umesh K. Mishra · IEEE Transactions on Electron Devices · 2001 · 431 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 348 citations

Semiconductor Technology, Semiconductor Devices, Electrical Engineering +9

A survey of Gallium Nitride HEMT for RF and high power applications

A.S. Augustine Fletcher, D. Nirmal · Superlattices and Microstructures · 2017 · 272 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6