L. Arivazhagan

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, Shubham Tayal et al. · Microelectronics Journal · 2021 · 110 citations

Engineering, Computer Engineering, Electrical Engineering +17

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

A.S. Augustine Fletcher, D. Nirmal, J. Ajayan et al. · AEU - International Journal of Electronics and Communications · 2018 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

D. Nirmal, L. Arivazhagan, A.S. Augustine Fletcher et al. · Superlattices and Microstructures · 2017 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Anwar Jarndal, L. Arivazhagan, D. Nirmal · International Journal of RF and Microwave Computer-Aided Engineering · 2020 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

L. Arivazhagan, D. Nirmal, D. J. Godfrey et al. · AEU - International Journal of Electronics and Communications · 2019 · 49 citations

Engineering, Electrical Engineering, Materials Science +17