D. J. Godfrey

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

L. Arivazhagan, D. Nirmal, D. J. Godfrey et al. · AEU - International Journal of Electronics and Communications · 2019 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

Diffusion of boron in heavily doped <i>n</i>- and <i>p</i>-type silicon

A. F. W. Willoughby, A G R Evans, P. Champ et al. · Journal of Applied Physics · 1986 · 43 citations

Engineering, Materials Engineering, Materials Science +17

The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors

Z.A. Shafi, C. J. Gibbings, P. Ashburn et al. · IEEE Transactions on Electron Devices · 1991 · 37 citations

Engineering, Electrical Engineering, Materials Science +14

Silicon Nitride Ceramic Composites with High Toughness

M. W. Lindley, D. J. Godfrey · Nature · 1971 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +14

Transient enhanced diffusion of phosphorus in silicon

N. E. B. Cowern, D. J. Godfrey, D. E. Sykes · Applied Physics Letters · 1986 · 31 citations

Engineering, Materials Engineering, Materials Science +17