J. Ajayan

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, Shubham Tayal et al. · Microelectronics Journal · 2021 · 110 citations

Engineering, Computer Engineering, Electrical Engineering +17

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon et al. · Physica E Low-dimensional Systems and Nanostructures · 2016 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

A.S. Augustine Fletcher, D. Nirmal, J. Ajayan et al. · AEU - International Journal of Electronics and Communications · 2018 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

J. Ajayan, D. Nirmal, P. Prajoon et al. · AEU - International Journal of Electronics and Communications · 2017 · 73 citations

Engineering, Electrical Engineering, Materials Science +16

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

D. Nirmal, L. Arivazhagan, A.S. Augustine Fletcher et al. · Superlattices and Microstructures · 2017 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16