P. Prajoon

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

J. Charles Pravin, D. Nirmal, P. Prajoon et al. · Physica E Low-dimensional Systems and Nanostructures · 2016 · 81 citations

Low-power Electronics, Electrical Engineering, Nanoscale System +10

Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

J. Ajayan, D. Nirmal, P. Prajoon et al. · AEU - International Journal of Electronics and Communications · 2017 · 73 citations

High Speed Applications, High-k Dielectrics, Electrical Engineering +9

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

D. Nirmal, L. Arivazhagan, A.S. Augustine Fletcher et al. · Superlattices and Microstructures · 2017 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Current Collapse Modeling +10

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon et al. · Microelectronics Journal · 2015 · 52 citations

Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

L. Arivazhagan, D. Nirmal, D. J. Godfrey et al. · AEU - International Journal of Electronics and Communications · 2019 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7