Binola K. Jebalin

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon et al. · Microelectronics Journal · 2015 · 52 citations

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

D. Nirmal, P. Vijayakumar, Divya Mary Thomas et al. · Microelectronics Reliability · 2012 · 44 citations

Electrical Engineering, Engineering, Subthreshold Performance +8

Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon et al. · Superlattices and Microstructures · 2014 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials

D. Nirmal, P. Vijayakumar, P. Patrick Chella Samuel et al. · International Journal of Electronics · 2012 · 32 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Nanoscale tri gate MOSFET for Ultra low power applications using high-k dielectrics

D. Nirmal, Prashanth Kumar, D. Joy et al. · 2013 · 29 citations

Low-power Electronics, Materials Science, Electrical Engineering +14