Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La₂O₃/SiO₂ gate dielectric

Abstract

Abstract Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La 2 O 3 /SiO 2 AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La 2 O 3 -based (La 2 O 3 /HfO 2 , La 2 O 3 /CeO 2 and single La 2 O 3 ) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La 2 O 3 /SiO 2 MOS-HEMT were demonstrated.