Chia-Hsun Wu

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation

Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc et al. · IEEE Journal of the Electron Devices Society · 2018 · 52 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-Performance GaN MOSHEMTs Fabricated With ALD Al₂O₃Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Yen-Ku Lin, Shuichi Noda, Chia-Ching Huang et al. · IEEE Electron Device Letters · 2017 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Man Ho Kwan, King‐Yuen Wong, Y. S. Lin et al. · 2014 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High <i>V</i> _th Stability by Field Plate Engineering

Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu et al. · IEEE Electron Device Letters · 2021 · 40 citations

Engineering, Electrical Engineering, Materials Engineering +12