Quang Ho Luc - Concepedia

Author

Quang Ho Luc

National Yang Ming Chiao Tung University ORCID

Also Known As

Q H Luc, Q. H. Luc, Q. Luc, Q.-H. Luc, Q.H Luc, Q.H. Luc, Quang Ho Luc, Quang Luc, Quang-Ho Luc

Publications

730

Citations

H-Index

Concepts

All Affiliations

National Yang Ming Chiao Tung University University of California, Berkeley Tohoku University National Cheng Kung University National University of Malaysia

About

Quang Ho Luc is an author at National Yang Ming Chiao Tung University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	505
2	Applied Physics	15	19	505
3	Electrical Engineering	14	18	488
4	Materials Science	8	8	161
5	Materials Engineering	5	5	87

Quang Ho Luc

Publications

600

Citations

H-Index

Page 1

	Year	Citations
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceSemiconductors	2018	58
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality Yan-Kui Liang, Jui-Sheng Wu, Chih-Yu Teng, IEEE Electron Device Letters	2021	51
Normally-OFF GaN MIS-HEMT With F<sup>−</sup> Doped Gate Insulator Using Standard Ion Implantation Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, IEEE Journal of the Electron Devices Society SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2018	50
High-Performance GaN MOSHEMTs Fabricated With ALD Al<sub>2</sub>O<sub>3</sub>Dielectric and NBE Gate Recess Technology for High Frequency Power Applications Yen-Ku Lin, Shuichi Noda, Chia-Ching Huang, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSub XmlnsEngineering	2017	41
Electrical Characteristics of n, p-In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPlasma PhysicsChemical DepositionDifferent Plasma Powers	2014	39
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High <i>V</i> <sub>th</sub> Stability by Field Plate Engineering Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HemtNanoelectronics	2021	37
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm<sup>2</sup> Specific On-Resistance for Power Device Applications Chia-Hsun Wu, Jianyou Chen, Ping-Cheng Han, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceSemiconductors	2019	34
Plasma Enhanced Atomic Layer Deposition Passivated HfO<sub>2</sub>/AlN/In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density Quang Ho Luc, Huy‐Binh Do, Chenming Hu, IEEE Electron Device Letters Materials ScienceElectrical EngineeringAluminum NitrideEngineeringIon Implantation	2015	31
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications Yen-Ku Lin, Shuichi Noda, Hsiao-Chieh Lo, IEEE Electron Device Letters Wide-bandgap SemiconductorNbe MethodElectrical EngineeringEngineeringDamage-free Nbe Process	2016	31
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors Quang Ho Luc, Shou Cheng, Po- Yi Chang, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPeald-aluminum Nitride	2016	26

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