Quang Ho Luc

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

Yan-Kui Liang, Jui-Sheng Wu, Chih-Yu Teng et al. · IEEE Electron Device Letters · 2021 · 51 citations

Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation

Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc et al. · IEEE Journal of the Electron Devices Society · 2018 · 50 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

High-Performance GaN MOSHEMTs Fabricated With ALD Al₂O₃Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Yen-Ku Lin, Shuichi Noda, Chia-Ching Huang et al. · IEEE Electron Device Letters · 2017 · 41 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Electrical Characteristics of n, p-In_0.53Ga_0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh et al. · IEEE Transactions on Electron Devices · 2014 · 39 citations

Wide-bandgap Semiconductor, Engineering, Plasma Physics +16