Ping-Cheng Han

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation

Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc et al. · IEEE Journal of the Electron Devices Society · 2018 · 50 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm² Specific On-Resistance for Power Device Applications

Chia-Hsun Wu, Jianyou Chen, Ping-Cheng Han et al. · IEEE Transactions on Electron Devices · 2019 · 34 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Venkatesan Nagarajan, Kun‐Ming Chen, Bo‐Yuan Chen et al. · IEEE Transactions on Device and Materials Reliability · 2020 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Ping-Cheng Han, Zong-Zheng Yan, Chia-Hsun Wu et al. · 2019 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12