Indications of Neutrino Oscillation in a 250 km Long-Baseline Experiment

Myunggeun Ahn, S. Aoki, H. Bhang, +94

Physical Review Letters

Measurement of neutrino oscillation by the K2K experiment

Myunggeun Ahn, E. Aliu, S. Andringa, +215

Physical review. D. Particles, fields, gravitation, and cosmology/Physical review. D, Particles, fields, gravitation, and cosmology

Detection of accelerator-produced neutrinos at a distance of 250 km

S.H. Ahn, S.H. An, S. Aoki, +144

Physics Letters B

Neutrino PropertyParticle PhysicsAccelerator-produced NeutrinosNeutrino PhysicDetector Physic +1

Measurement of single <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:msup><mml:mi>π</mml:mi><mml:mn>0</mml:mn></mml:msup></mml:math> production in neutral current neutrino interactions with water by a 1.3 GeV wide band muon neutrino beam

S. Nakayama, C. Mauger, Myunggeun Ahn, +104

Physics Letters B

Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

Tetsuya Tatsumi, Hisataka Hayashi, Satoshi Morishita, +5

Japanese Journal of Applied Physics

EngineeringPlasma PhysicsChemistryPlasma ProcessingPlasma Electronics +19

50 nm gate electrode patterning using a neutral-beam etching system

Shuichi Noda, H. Nishimori, Tohru Ida, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Nm Gate ElectrodeElectrical EngineeringEngineeringElectron-beam LithographyBeam Lithography +12

Search for Electron Neutrino Appearance in a 250 km Long-Baseline Experiment

Myunggeun Ahn, S. Aoki, Y. Ashie, +103

Physical Review Letters

Mechanism of C4F8 dissociation in parallel-plate-type plasma

Hisataka Hayashi, Satoshi Morishita, Tetsuya Tatsumi, +6

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringPlasma SciencePlasma PhysicsLight Fluorocarbon RadicalsChemistry +14

High-Performance GaN MOSHEMTs Fabricated With ALD Al₂O₃Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Yen-Ku Lin, Shuichi Noda, Chia-Ching Huang, +7

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSub XmlnsEngineering +9

Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, +11

IEEE Transactions on Electron Devices

Electrical EngineeringNb TechnologyEngineeringMicrofabricationNanoelectronics +10