E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High <i>V</i> _th Stability by Field Plate Engineering

Abstract

A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which creates a cascode-like configuration with a D-mode GaN MISHEMT. This E-mode SCFP GaN FEG-HEMT has a positive V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of 2.81 V, a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D,max</sub> of 757mA/mm, and a BV of 866 V. Dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> reduced 25% when operated at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSQ</sub> = 400 V. ON-state stress tests also show improved current collapse phenomena. Additionally, to address the charge storage abilities of FEG-HEMTs, a multi-cycle OFF-state ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 300 V, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> = 0 V) retention test was conducted. The SCFP FEG-HEMT showed 58.46% less V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> shift percentage than the FEG-HEMT without field plates.