Daisuke Ueda

GaN on Si Technologies for Power Switching Devices

Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka et al. · IEEE Transactions on Electron Devices · 2013 · 411 citations

Engineering, Electrical Engineering, Materials Science +17

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

GaN transistors on Si for switching and high-frequency applications

Tetsuzo Ueda, Masahiro Ishida, Tsuyoshi Tanaka et al. · Japanese Journal of Applied Physics · 2014 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Recent advances in GaN transistors for future emerging applications

Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda et al. · physica status solidi (a) · 2009 · 99 citations

Engineering, Electrical Engineering, Materials Science +17

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Yasuhiro Uemoto, Daisuke Shibata, Manabu Yanagihara et al. · 2007 · 92 citations

Engineering, Electrical Engineering, Materials Science +17