Yueh-Chin Lin

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability improvement in GaN HEMT power device using a field plate approach

Wen-Hao Wu, Yueh-Chin Lin, Ping-Chieh Chin et al. · Solid-State Electronics · 2017 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +15

A -Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

Yueh-Chin Lin, Edward Yi Chang, Hiroshi Yamaguchi et al. · IEEE Transactions on Electron Devices · 2007 · 30 citations

Engineering, Electrical Engineering, Microelectronics +16

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin et al. · IEEE Journal of the Electron Devices Society · 2017 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors

Hai-Dang Trinh, Yueh-Chin Lin, Huan-Chung Wang et al. · Applied Physics Express · 2012 · 20 citations

Engineering, Materials Engineering, Materials Science +17