Huan-Chung Wang

Gate Recessed Quasi-Normally OFF Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Ting-En Hsieh, Edward Yi Chang, Yizuo Song et al. · IEEE Electron Device Letters · 2014 · 109 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation

Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc et al. · IEEE Journal of the Electron Devices Society · 2018 · 50 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm² Specific On-Resistance for Power Device Applications

Chia-Hsun Wu, Jianyou Chen, Ping-Cheng Han et al. · IEEE Transactions on Electron Devices · 2019 · 34 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

High-Performance LPCVD-SiN_x/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm² for Power Device Applications

Huan-Chung Wang, Franky Lumbantoruan, Ting-En Hsieh et al. · IEEE Journal of the Electron Devices Society · 2018 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17