Franky Lumbantoruan

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu et al. · IEEE Electron Device Letters · 2018 · 58 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Tien‐Tung Luong, Franky Lumbantoruan, Yen‐Yu Chen et al. · physica status solidi (a) · 2017 · 46 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

High-Performance LPCVD-SiN_x/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm² for Power Device Applications

Huan-Chung Wang, Franky Lumbantoruan, Ting-En Hsieh et al. · IEEE Journal of the Electron Devices Society · 2018 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Franky Lumbantoruan, Yuan-Yee Wong, Yue-Han Wu et al. · 2014 · 22 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Franky Lumbantoruan, Chia‐Hsun Wu, Xia‐Xi Zheng et al. · physica status solidi (a) · 2018 · 11 citations

Semiconductors, Ni/au Schottky Contact, Electrical Engineering +14