Hai-Dang Trinh - Concepedia

Author

Hai-Dang Trinh

National Yang Ming Chiao Tung University

Also Known As

Hai-Dang Trinh

Publications

201

Citations

H-Index

Concepts

All Affiliations

National Yang Ming Chiao Tung University National Institutes of Applied Research

About

Hai-Dang Trinh is an author at National Yang Ming Chiao Tung University specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	152
2	Applied Physics	6	6	152
3	Electrical Engineering	6	6	152
4	Materials Engineering	2	2	50
5	Chemical Engineering	1	1	31

Hai-Dang Trinh

Publications

152

Citations

H-Index

Page 1

	Year	Citations
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell Binh Tinh Tran, Edward Yi Chang, Hai-Dang Trinh, Solar Energy Materials and Solar Cells Electrical EngineeringEngineeringApplied PhysicsBuilding-integrated PhotovoltaicsPhotovoltaic System	2012	38
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate Shih-Hsuan Tang, Edward Yi Chang, Mantu K. Hudait, Applied Physics Letters Materials ScienceElectrical EngineeringGe P-channel DeviceEngineeringEpitaxial Growth	2011	33
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> on InAs Hai-Dang Trinh, Edward Yi Chang, Yuen‐Yee Wong, Japanese Journal of Applied Physics EngineeringChemical DepositionSurface TechnologyChemical EngineeringTma Cleaning	2010	31
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors Hai-Dang Trinh, Yueh-Chin Lin, Huan-Chung Wang, Applied Physics Express Molecular-beam-deposited HfoEngineeringN-inas/ingaas Metal–oxide–semiconductor CapacitorsDifferent Postdeposition AnnealingPda Temperature	2012	20
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In$_{0.5}$Ga$_{0.5}$As and In$_{0.3}$Ga$_{0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition Hong-Quan Nguyen, Edward Yi Chang, Hung-Wei Yu, Applied Physics Express Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsDislocation Blocking	2012	19
Effect of annealing processes on the electrical properties of the atomic layer deposition Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As metal oxide semiconductor capacitors Quang Ho Luc, Edward Yi Chang, Hai-Dang Trinh, Japanese Journal of Applied Physics Materials SciencePost Deposition AnnealingElectrical EngineeringSemiconductor TechnologyEngineering	2014	11

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