IEEE Transactions on Nuclear Science · 1991 · 41 citations · 12 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsRadiation MeasurementSemiconductor DevicesCmos Circuit DesignDesign For TestabilityDevice CharacterizationDevice ModelingDevice ReliabilityRadiation HardeningCapacitance-voltage MeasurementsCharge PumpingHardnessParametric TestsRadiation HardnessRadiation TestingRadiation-hard DevicesRadiation-hardened Integrated Circuits
To implement the qualified manufacturers list (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2- mu m radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physical Mechanisms Contributing to Device "Rebound"
J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations