Concepedia

Charge Pumping

Charge pumping is a measurement technique used in semiconductor device characterization that involves the cyclic trapping and release of charge carriers at interface states through controlled voltage pulsing of a MOS capacitor to quantify interface trap density and reliability degradation.

717

Publications

33.9K

Citations

2K

Authors

568

Institutions

Publications per year

2017–2026

106

Parents

Publications

717

Electric multipole moments, topological multipole moment pumping, and chiral hinge states in crystalline insulators

Wladimir A. Benalcazar, B. Andrei Bernevig, Taylor L. Hughes · Physical review. B./Physical review. B · 2017 · 1.4K citations · Full text

, , +16

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

, , +17

Integrated charge excitation triboelectric nanogenerator

Wenlin Liu, Zhao Wang, Zhong Lin Wang et al. · Nature Communications · 2019 · 598 citations · Full text

, , +13

Single-Electron Pump Based on Charging Effects

H. Pothier, P. Lafarge, C. Urbina et al. · Europhysics Letters (EPL) · 1992 · 504 citations

, , +17

Charge pumping in MOS devices

J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations

, , +17

1–5 of 717

Authors

2K

  1. GG
    G. Groeseneken

    IMEC, Belgium

    30 publications · 3.8K citations

    23

    h-index

  2. GP
    G. Palumbo

    University of Catania, Italy

    17 publications · 913 citations

    15

    h-index

  3. HM
    H.E. Maes

    IMEC, Belgium

    18 publications · 3.2K citations

    15

    h-index

  4. NS
    N. S. Saks

    United States Naval Research Laboratory, United States

    13 publications · 562 citations

    12

    h-index

  5. AB
    Andrea Ballo

    University of Catania, Italy

    11 publications · 358 citations

    11

    h-index

1–5 of 2K

Institutions

568

  1. IMEC

    Leuven, Belgium

    24 h-index

    154 publications

    10.9K citations

  2. National Institute of Standards and Technology

    Gaithersburg, United States

    17 h-index

    73 publications

    3.3K citations

  3. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    17 h-index

    78 publications

    2.9K citations

  4. Centre National de la Recherche Scientifique

    Paris, France

    15 h-index

    44 publications

    1.7K citations

  5. University of Catania

    Catania, Italy

    15 h-index

    45 publications

    2.2K citations

  6. KU Leuven

    Leuven, Belgium

    15 h-index

    47 publications

    9.4K citations

  7. United States Naval Research Laboratory

    Washington, United States

    14 h-index

    25 publications

    1K citations

  8. University of California, Los Angeles

    Los Angeles, United States

    12 h-index

    27 publications

    740 citations

1–8 of 568

Venues

  1. IEEE Transactions on Electron Devices

    80 publications · 5.9K citations

    35

    h-index

  2. IEEE Electron Device Letters

    41 publications · 2K citations

    25

    h-index

  3. Applied Physics Letters

    29 publications · 1.7K citations

    20

    h-index

  4. IEEE Journal of Solid-State Circuits

    26 publications · 2.6K citations

    20

    h-index

  5. IEEE Transactions on Nuclear Science

    29 publications · 1.1K citations

    20

    h-index

1–5