Capacitance-voltage Measurements

Capacitance-Voltage Measurements is a semiconductor characterization technique that distinguishes itself by quantifying the variation of capacitance with applied voltage to determine doping profiles, interface states, and oxide properties in thin dielectrics.

2.4K

Publications

105.2K

Citations

8.5K

Authors

1.4K

Institutions

Publications per year

2017–2026

278

Variants

C-v Measurements

Authors

8.5K

  1. PC
    Paul C. McIntyre

    Stanford University, United States

    19 publications · 1.6K citations

    17

    h-index

  2. SJ
    S. J. Pearton

    University of Florida, United States

    19 publications · 1.1K citations

    16

    h-index

  3. PK
    Paul K. Hurley

    University College Cork, Ireland

    19 publications · 724 citations

    16

    h-index

  4. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    20 publications · 1.1K citations

    15

    h-index

  5. ŞA
    Ş. Altındal

    Gazi University, Türkiye

    15 publications · 772 citations

    14

    h-index

1–5 of 8.5K

Venues

  1. Applied Physics Letters

    551 publications · 29.7K citations

    85

    h-index

  2. Journal of Applied Physics

    468 publications · 24K citations

    74

    h-index

  3. IEEE Transactions on Electron Devices

    91 publications · 4.8K citations

    33

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 118 publications · 3.6K citations

    30

    h-index

  5. Journal of The Electrochemical Society

    JES · 62 publications · 2.2K citations

    27

    h-index

1–5