International Journal of Computer Applications · 2012 · 13 citations · 5 references
A novel device n-MISISFET with a "dielectric stack" instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various electrical characteristics is studied in the paper. The variation of electric field with substrate doping is also studied in this paper. The device is based on the principle of resonant tunneling diode (RTD).
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Design of ion-implanted MOSFET's with very small physical dimensions
R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu et al. · IEEE Journal of Solid-State Circuits · 1974 · 3.4K citations
High performance fully-depleted tri-gate CMOS transistors
B.S. Doyle, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2003 · 453 citations
Generalized guide for MOSFET miniaturization
J.R. Brews, Wolf Fïchtner, E. H. Nicollian et al. · IEEE Electron Device Letters · 1980 · 356 citations
Numerical Analysis, Device Modeling, Electrical Engineering +14