Concepedia

Threshold Voltage Extraction

Threshold Voltage Extraction is a methodological procedure in semiconductor device characterization that identifies the gate voltage at which a MOS capacitor transitions from depletion to strong inversion, thereby distinguishing the onset of channel formation in MOSFETs.

599

Publications

25.2K

Citations

2.2K

Authors

491

Institutions

Publications per year

2017–2026

109

Parents

Publications

599

New method for the extraction of MOSFET parameters

G. Ghibaudo · Electronics Letters · 1988 · 831 citations

, , +15

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

J.G. Fossum · IEEE Transactions on Electron Devices · 1983 · 689 citations

, , +17

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai, Yugang Zhou, Kevin J. Chen et al. · IEEE Electron Device Letters · 2005 · 650 citations

, , +17

Electro-optical characteristics and switching behavior of the in-plane switching mode

Masahito Oh‐e, Katsumi Kondo · Applied Physics Letters · 1995 · 640 citations · Full text

, , +17

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 392 citations

, , +17

1–5 of 599

Authors

2.2K

  1. GG
    G. Ghibaudo

    Institut de Microélectronique, Electromagnétisme et Photonique, France

    14 publications · 1.3K citations

    13

    h-index

  2. AO
    A. Ortíz-Conde

    Simón Bolívar University, Venezuela

    11 publications · 766 citations

    11

    h-index

  3. DF
    Denis Flandre

    UCLouvain, Belgium

    11 publications · 440 citations

    10

    h-index

  4. FJ
    Francisco J. García-Sánchez

    Simón Bolívar University, Venezuela

    9 publications · 724 citations

    9

    h-index

  5. PK
    Pramod Kumar Tiwari

    Indian Institute of Technology Patna, India

    8 publications · 252 citations

    8

    h-index

1–5 of 2.2K

Institutions

491

  1. IBM (United States)

    Armonk, United States

    15 h-index

    61 publications

    2.6K citations

  2. Institut polytechnique de Grenoble

    Grenoble, France

    12 h-index

    59 publications

    1.4K citations

  3. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    12 h-index

    63 publications

    4.7K citations

  4. Université Grenoble Alpes

    Saint-Martin-d'Hères, France

    12 h-index

    52 publications

    1.3K citations

  5. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    34 publications

    1.5K citations

  6. IMEC

    Leuven, Belgium

    12 h-index

    39 publications

    1.5K citations

  7. Institute of Microelectronics

    Beijing, China

    11 h-index

    49 publications

    1.3K citations

  8. Simón Bolívar University

    Caracas, Venezuela

    11 h-index

    32 publications

    2.6K citations

1–8 of 491

Venues

  1. IEEE Transactions on Electron Devices

    99 publications · 4.8K citations

    39

    h-index

  2. Solid-State Electronics

    78 publications · 3.2K citations

    30

    h-index

  3. IEEE Electron Device Letters

    48 publications · 4K citations

    28

    h-index

  4. Applied Physics Letters

    18 publications · 1.5K citations

    16

    h-index

  5. Superlattices and Microstructures

    15 publications · 435 citations

    13

    h-index

1–5