IEEE Electron Device Letters · 1980 · 356 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationShort-channel EffectsVoltage ScalingChannel Doping EffectsChannel Length ScalingDevice OptimizationGate Oxide Thickness EffectsGate SizingMosfet ModelingScale Factor EstimationScaling Effects In Cmos
As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reduction of all dimensions by the same scale factor.
5
A charge-sheet model of the MOSFET
J.R. Brews · Solid-State Electronics · 1978 · 555 citations
Engineering, Computer Engineering, Electrical Engineering +12