Plasma Resistance and Etch Mechanism of High Purity SiC under Fluorocarbon Plasma

Silicon carbide benefits and advantages for power electronics circuits and systems

Ahmed Elasser, T. Paul Chow · Proceedings of the IEEE · 2002 · 510 citations

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 303 citations · Full text

Selective Etching, Engineering, Integrated Circuits +18

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

T. E. F. M. Standaert, Christer Hedlund, Eric Joseph et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 275 citations

Engineering, Silicon Carbide, Silicon On Insulator +19

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, JJ Beulens, M. Schaepkens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 250 citations

Fluorocarbon Film Growth, Engineering, Silicon On Insulator +17

Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

Pauline Ho, Justine E. Johannes, Richard J. Buss et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2001 · 123 citations

Engineering, Vacuum Device, Chemistry +17