Silicon carbide benefits and advantages for power electronics circuits and systems

Ahmed Elasser, T. Paul Chow

Proceedings of the IEEE

Wide-bandgap SemiconductorEngineeringPower Electronic SystemsPower ElectronicsSemiconductor Device +15

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, +3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Selective EtchingEngineeringIntegrated CircuitsChemistrySilicon On Insulator +16

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

T. E. F. M. Standaert, Christer Hedlund, Eric Joseph, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringSilicon CarbideSilicon On InsulatorPlasma ProcessingChemical Engineering +17

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, JJ Beulens, M. Schaepkens, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Fluorocarbon Film GrowthEngineeringSilicon On InsulatorPlasma ProcessingChemical Engineering +15

Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

Pauline Ho, Justine E. Johannes, Richard J. Buss, +1

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringVacuum DeviceChemistrySilicon On InsulatorPlasma Processing +15

Control of surface reactions in high-performance SiO2 etching

Tomoaki Tatsumi, Miyako Matsui, Mitsuru Okigawa, +1

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Electrical EngineeringIncident Ion EnergyEngineeringIncident FluxesMicrofabrication +9

Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications

Liudi Jiang, Rebecca Cheung, R. Brown, +1

Journal of Applied Physics

EngineeringEtched Sic SurfaceSilicon CarbideIntegrated CircuitsSilicon On Insulator +14

X‐Ray Photoelectron Spectroscopy Study on the Interaction of Yttrium–Aluminum Oxide with Fluorine‐Based Plasma

Dae‐Min Kim, Sang‐Ho Lee

Journal of the American Ceramic Society

Materials SciencePlasma ElectronicsMaterial AnalysisEngineeringPhysics +11

Observation of surface reaction layers formed in highly selective SiO2 etching

Miyako Matsui, Tetsuya Tatsumi, Makoto Sekine

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringElectron-beam LithographyIntegrated CircuitsVacuum DeviceSilicon On Insulator +16

Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses

Burak Ozpineci, Leon M. Tolbert, Syed K. Islam, +1

Electrical EngineeringEnergy Efficient DriveEngineeringPower DevicePower Devices +11