T. E. F. M. Standaert

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 303 citations · Full text

Selective Etching, Engineering, Integrated Circuits +18

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

T. E. F. M. Standaert, Christer Hedlund, Eric Joseph et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 275 citations

Engineering, Silicon Carbide, Silicon On Insulator +19

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 256 citations

Engineering, Fluorocarbon Layers, Integrated Circuits +18

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, JJ Beulens, M. Schaepkens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 250 citations

Fluorocarbon Film Growth, Engineering, Silicon On Insulator +17

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

M. Schaepkens, R.C.M. Bosch, T. E. F. M. Standaert et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 106 citations · Full text

Fluorocarbon Deposition, Chemical Engineering, Engineering +10