T. E. F. M. Standaert

Author

University at Albany, State University of New York

Also Known As

T. E. F. M. Standaert

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York Albany State University Rensselaer Polytechnic Institute Lam Research (United States)IBM (United States)

About

T. E. F. M. Standaert is an author at University at Albany, State University of New York specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	14	1.6K
2	Applied Physics	12	12	1.4K
3	Chemical Engineering	7	7	1.1K
4	Chemistry	3	3	634
5	Natural Sciences	1	1	256

T. E. F. M. Standaert

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Selective EtchingEngineeringIntegrated CircuitsChemistrySilicon On Insulator	1999	303
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide T. E. F. M. Standaert, Christer Hedlund, Eric Joseph, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSilicon CarbideSilicon On InsulatorPlasma ProcessingChemical Engineering	2003	275
High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringFluorocarbon LayersIntegrated CircuitsChemistryVacuum Device	1998	256
Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor N. R. Rueger, JJ Beulens, M. Schaepkens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Fluorocarbon Film GrowthEngineeringSilicon On InsulatorPlasma ProcessingChemical Engineering	1997	250
Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas M. Schaepkens, R.C.M. Bosch, T. E. F. M. Standaert, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Fluorocarbon DepositionChemical EngineeringEngineeringEtch ProcessesCooled Substrate Surface	1998	106
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor N. R. Rueger, M. F. Doemling, M. Schaepkens, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Selective EtchingEngineeringIntegrated CircuitsSilicon On InsulatorPlasma Processing	1999	79
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2 T. E. F. M. Standaert, P. J. Matsuo, Susan D. Allen, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Fluorocarbon Film IncreasesEngineeringIntegrated CircuitsChemistryPlasma Processing	1999	75
Etching of xerogel in high-density fluorocarbon plasmas T. E. F. M. Standaert, Eric Joseph, G. S. Oehrlein, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceVarious Xerogel FilmsChemical EngineeringEngineeringMicrofabrication	2000	58
Characterization of Al, Cu, and TiN surface cleaning following a low-<i>K</i> dielectric etch P. J. Matsuo, T. E. F. M. Standaert, Susan D. Allen, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Fluorocarbon ExposureEngineeringVacuum DeviceHigh DensityChemical Engineering	1999	54
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) T. E. F. M. Standaert, P. J. Matsuo, X. Li, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringPattern TransferInterlayer DielectricsVacuum DeviceHigh-density Plasma Patterning	2001	48

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