N. R. Rueger

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 303 citations · Full text

Selective Etching, Engineering, Integrated Circuits +18

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 256 citations

Engineering, Fluorocarbon Layers, Integrated Circuits +18

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, JJ Beulens, M. Schaepkens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 250 citations

Fluorocarbon Film Growth, Engineering, Silicon On Insulator +17

Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, M. F. Doemling, M. Schaepkens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 79 citations

Selective Etching, Engineering, Integrated Circuits +19

Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas

M. F. Doemling, N. R. Rueger, G. S. Oehrlein · Applied Physics Letters · 1996 · 54 citations

Inverse Rie Lag, Electrical Engineering, Engineering +14