Depth Profiling of Border Traps in MOSFET With High-$kappa$Gate Dielectric by Charge-Pumping Technique

Abstract

Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(D_ it)$</tex> . The charge pumped per cycle <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(Q_ cp)$</tex> versus high level <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_h)$</tex> of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Q_ cp$</tex> as a function of frequency was successfully used to determine the depth profile of border-trap density near the high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$kappa$</tex> gate dielectric/Si interface. The influence of border trap in high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$kappa$</tex> dielectric on the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$D_ it$</tex> measurement can be prevented by an appropriate selection of gate frequency in CP technique.