A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Aivars J. Lelis, Daniel B. Habersat, Ronald Green et al. · IEEE Transactions on Electron Devices · 2008 · 314 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability and performance limitations in SiC power devices

Ranbir Singh · Microelectronics Reliability · 2005 · 268 citations

Engineering, Electrical Engineering, Materials Science +14

The mechanism of defect creation and passivation at the SiC/SiO₂interface

Péter Deák, Jan M. Knaup, T. Hornos et al. · Journal of Physics D Applied Physics · 2007 · 166 citations

Engineering, Materials Engineering, Materials Science +17

Band alignment and defect states at SiC/oxide interfaces

Vorobeĭchikov Ev, Florin Ciobanu, Sima Dimitrijev et al. · Journal of Physics Condensed Matter · 2004 · 149 citations

Engineering, Materials Engineering, Materials Science +17

Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures

A. Palma, A. Godoy, J. A. Jiménez-Tejada et al. · Physical review. B, Condensed matter · 1997 · 138 citations

Natural Sciences, Electrical Engineering, Physics +17