Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Fowler-Nordheim Tunneling into Thermally Grown SiO2

M. Lenzlinger, E. H. Snow · Journal of Applied Physics · 1969 · 1.7K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, Yuan Taur et al. · IEEE Electron Device Letters · 1997 · 807 citations

Device Modeling, Inversion Layer, Electrical Engineering +13

Tunneling of electrons from Si into thermally grown SiO2

Z. A. Weinberg · Solid-State Electronics · 1977 · 217 citations

Tunneling Microscopy, Physics, Applied Physics +2

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

Michel Depas, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1994 · 133 citations

Materials Science, Electrical Characteristics, Electrical Engineering +6

Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

S. Jallepalli, J. Bude, W.-K. Shih et al. · IEEE Transactions on Electron Devices · 1997 · 101 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14