A.F. Tasch

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Logan Parker, A.F. Tasch · IEEE Circuits and Devices Magazine · 1990 · 304 citations

Materials Science, Electrical Engineering, Dielectrics +14

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 271 citations

Materials Engineering, Electrical Engineering, Ion Implantation +12

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Chuen‐Jinn Tsai, K. -H. Li, D. Kinosky et al. · Applied Physics Letters · 1992 · 257 citations

Chemical Engineering, Photoluminescence, Engineering +11

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

B. Anthony, L. Breaux, Tsan‐sheng Hsu et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 128 citations

Engineering, Plasma Physics, Silicon Substrate Surfaces +18

A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

S.A. Hareland, Srini Krishnamurthy, S. Jallepalli et al. · IEEE Transactions on Electron Devices · 1996 · 109 citations

Device Modeling, Electrical Engineering, Efficient Model +15