B. Anthony

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

B. Anthony, L. Breaux, Tsan‐sheng Hsu et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 128 citations

Engineering, Plasma Physics, Silicon Substrate Surfaces +18

Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition

L. Breaux, B. Anthony, Tsan‐sheng Hsu et al. · Applied Physics Letters · 1989 · 69 citations

Engineering, Optoelectronic Devices, Integrated Circuits +20

Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

B. Anthony, Tsan‐sheng Hsu, L. Breaux et al. · Journal of Electronic Materials · 1990 · 47 citations

Materials Engineering, Electrical Engineering, Engineering +6

Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

Tsan‐sheng Hsu, B. Anthony, Ruizhe Qian et al. · Journal of Electronic Materials · 1991 · 46 citations

Electrical Engineering, Engineering, Surface Science +7

Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters

B. Anthony, Tsan‐sheng Hsu, L. Breaux et al. · Journal of Electronic Materials · 1990 · 37 citations

Electrical Engineering, Engineering, Remote Plasma-enhanced Cvd +8