Concepedia

Author

Ruizhe Qian

The University of Texas at AustinORCID

Also Known As

R. Qian, R.-Z. Qian, Richeng Qian, Rongfang Qian, Ruizhe Qian

37

Publications

553

Citations

11

H-Index

19

Concepts

All Affiliations

The University of Texas at Austin
RQ

About

Ruizhe Qian is an author at The University of Texas at Austin specializing in applied physics, engineering, and surface science.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Applied Physics

11

11

514

2

Engineering

10

10

499

3

Chemical Engineering

3

3

288

4

Electrical Engineering

3

3

130

5

Chemistry

1

1

257

Ruizhe Qian

×

12

Publications

524

Citations

11

H-Index

YearCitations

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Chuen‐Jinn Tsai, K. -H. Li, D. Kinosky,

Applied Physics Letters

1992

257

Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

B. Anthony, Tsan‐sheng Hsu, L. Breaux,

Journal of Electronic Materials

1990

47

Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

Tsan‐sheng Hsu, B. Anthony, Ruizhe Qian,

Journal of Electronic Materials

1991

46

Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters

B. Anthony, Tsan‐sheng Hsu, L. Breaux,

Journal of Electronic Materials

1990

37

Transmission electron microscopy study of chemically etched porous Si

S. Shih, Keun‐Hwa Jung, Ruizhe Qian,

Applied Physics Letters

1993

35

Low-temperature growth of Ge<i>x</i>Si1−<i>x</i>/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition

D. Kinosky, Ruizhe Qian, J. Irby,

Applied Physics Letters

1991

19

The use of langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition

B. Anthony, Tsan‐sheng Hsu, Ruizhe Qian,

Journal of Electronic Materials

1991

19

Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment

A. Mahajan, J. Irby, D. Kinosky,

Thin Solid Films

1993

15

Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy

Tsan‐sheng Hsu, B. Anthony, Ruizhe Qian,

Journal of Electronic Materials

1992

14

Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

Tsan‐sheng Hsu, B. Anthony, L. Breaux,

Journal of Electronic Materials

1990

13

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