Logan Parker

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Logan Parker, A.F. Tasch · IEEE Circuits and Devices Magazine · 1990 · 304 citations

Materials Science, Electrical Engineering, Dielectrics +14

Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs

A.F. Tasch, Logan Parker · Proceedings of the IEEE · 1989 · 77 citations

Engineering, Memory Design, Emerging Memory Technology +17

A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

R. Muralidhar, R.F. Steimle, M. Sadd et al. · 2004 · 63 citations

Non-volatile Memory, Electrical Engineering, Engineering +12

Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors

C. Sudhama, John C. Carrano, Logan Parker et al. · MRS Proceedings · 1990 · 18 citations

Materials Science, Electrical Engineering, Ferroelastics +9

A high density 0.10 μm CMOS technology using low K dielectric and copper interconnect

Shivendra Singh Parihar, M. Angyal, B. Boeck et al. · 2002 · 15 citations

Engineering, Vlsi Design, Computer Architecture +18