John C. Carrano

GaN avalanche photodiodes

John C. Carrano, Damien Lambert, C. J. Eiting et al. · Applied Physics Letters · 2000 · 256 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

John C. Carrano, T. Li, Piotr Grudowski et al. · Journal of Applied Physics · 1998 · 217 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

John C. Carrano, Piotr Grudowski, C. J. Eiting et al. · Applied Physics Letters · 1997 · 102 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

Michael Wraback, H. Shen, John C. Carrano et al. · Applied Physics Letters · 2000 · 98 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Electrical and reliability properties of PZT thin films for ULSI DRAM applications

John C. Carrano, C. Sudhama, V. Chikarmane et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 1991 · 92 citations