H. Shen - Concepedia

Author

H. Shen

DEVCOM Army Research Laboratory ORCID

Also Known As

Deng, W., H Shen, H. SHEN, H. Shen, Hao Shen, HengWei Shen, Huaping Shen, Shen, Hongen

197

Publications

6.7K

Citations

H-Index

Concepts

All Affiliations

DEVCOM Army Research Laboratory Brooklyn College Rutgers, The State University of New Jersey City University of New York United States Department of the Army

About

H. Shen is an author at DEVCOM Army Research Laboratory specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	65	5.5K
2	Applied Physics	32	64	5.5K
3	Electrical Engineering	19	30	2.5K
4	Natural Sciences	7	7	742
5	Chemical Engineering	1	1	140

H. Shen

Publications

6.2K

Citations

H-Index

Page 1

	Year	Citations
ZnO Schottky ultraviolet photodetectors S. Liang, H. Sheng, Y. Liu, Journal of Crystal Growth Electrical EngineeringPhotoelectric SensorEngineeringPhotodetectorsOptical Properties	2001	904
Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition C. R. Gorla, Nuri W. Emanetoglu, S. Liang, Journal of Applied Physics	1999	737
Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films Supab Choopun, R. D. Vispute, Wei Yang, Applied Physics Letters Materials ScienceMaterials EngineeringEpitaxial GrowthMaterial AnalysisEngineering	2002	560
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices Fred H. Pollak, H. Shen Materials Science and Engineering R Reports Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringApplied Physics	1993	370
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD Y. Liu, C. R. Gorla, S. Liang, Journal of Electronic Materials Materials SciencePhotoelectric SensorEngineeringOptical PropertiesOxide Electronics	2000	368
Franz–Keldysh oscillations in modulation spectroscopy H. Shen, Mitra Dutta Journal of Applied Physics Optical MaterialsEngineeringSemiconductorsElectronic DevicesOptical Properties	1995	305
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe, Applied Physics Letters Ii-vi SemiconductorPhotonicsPhotoluminescenceEngineeringPhysics	2011	299
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films Wenjin Yang, R. D. Vispute, Supab Choopun, Applied Physics Letters Short Wavelength OpticOptical MaterialsEngineeringV BiasOptoelectronic Devices	2001	253
Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors Wei Yang, Shiva S. Hullavarad, B. Nagaraj, Applied Physics Letters EngineeringSemiconductorsIi-vi SemiconductorMgxzn1−xo LayerOptical Properties	2003	250
Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system Raghu N. Bhattacharya, H. Shen, P. Parayanthal, Physical review. B, Condensed matter EngineeringReverse Dc BiasSpace-charge RegionCharge TransportElectronic Structure	1988	160

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