R. D. Vispute - Concepedia

Author

R. D. Vispute

University of Maryland, College Park

Also Known As

R D Vispute, R. D. Vispute, R.D Vispute, R.D. Vispute, Ratnakar D Vispute, Ratnakar D. Vispute, Ratnakar Vispute

162

Publications

Citations

H-Index

Concepts

All Affiliations

University of Maryland, College Park DEVCOM Army Research Laboratory North Carolina State University Savitribai Phule Pune University Blue Wave Semiconductors (United States)

About

R. D. Vispute is an author at University of Maryland, College Park specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	66	4.7K
2	Applied Physics	31	65	4.7K
3	Materials Engineering	18	28	1.8K
4	Electrical Engineering	15	20	1.5K
5	Chemistry	2	2	74

R. D. Vispute

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films Supab Choopun, R. D. Vispute, Wei Yang, Applied Physics Letters Materials ScienceMaterials EngineeringEpitaxial GrowthMaterial AnalysisEngineering	2002	560
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices R. D. Vispute, V. Talyansky, Supab Choopun, Applied Physics Letters Materials ScienceElectrical EngineeringElectronic DevicesEngineeringOxide Electronics	1998	438
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire Supab Choopun, R. D. Vispute, W. Noch, Applied Physics Letters EngineeringLaser MaterialOptical PropertiesMolecular Beam EpitaxyPulsed Laser Deposition	1999	326
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films Wenjin Yang, R. D. Vispute, Supab Choopun, Applied Physics Letters Short Wavelength OpticOptical MaterialsEngineeringV BiasOptoelectronic Devices	2001	253
Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors Wei Yang, Shiva S. Hullavarad, B. Nagaraj, Applied Physics Letters EngineeringSemiconductorsIi-vi SemiconductorMgxzn1−xo LayerOptical Properties	2003	250
High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides R. D. Vispute, V. Talyansky, Z. Trajanovic, Applied Physics Letters Materials ScienceOxide HeterostructuresZno Buffer LayersEpitaxial GrowthEngineering	1997	225
Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads Ichiro Takeuchi, Wei Yang, Kao‐Shuo Chang, Journal of Applied Physics Materials ScienceIi-vi SemiconductorShort Wavelength OpticOptical MaterialsEngineering	2003	208
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 Maoqi He, Indira Minus, Piezhen Zhou, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorLarge-scale Gan NanowiresEngineeringNanotechnology	2000	199
Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase S. X. Zhang, D. C. Kundaliya, Weiqiang Yu, Journal of Applied Physics Materials EngineeringMaterials ScienceOptical MaterialsResistive Rutile PhaseEngineering	2007	177
High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition R. D. Vispute, Hong Wu, J. Narayan Applied Physics Letters Materials ScienceMaterials EngineeringAln FilmAluminium NitrideEngineering	1995	151

Page 1