C. J. Eiting

GaN avalanche photodiodes

John C. Carrano, Damien Lambert, C. J. Eiting et al. · Applied Physics Letters · 2000 · 256 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

John C. Carrano, T. Li, Piotr Grudowski et al. · Journal of Applied Physics · 1998 · 217 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Demonstration of a radiation resistant, high efficiency SiC betavoltaic

C. J. Eiting, V. Krishnamoorthy, S. Rodgers et al. · Applied Physics Letters · 2006 · 142 citations

Electrical Engineering, Engineering, P33 Source +10

Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

John C. Carrano, Piotr Grudowski, C. J. Eiting et al. · Applied Physics Letters · 1997 · 102 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

Z. Liliental‐Weber, Mourad Benamara, W. Swider et al. · Applied Physics Letters · 1999 · 91 citations

Materials Science, Materials Engineering, N Polarity +14