Demonstration of a radiation resistant, high efficiency SiC betavoltaic

Abstract

A SiC p-i-n junction betavoltaic was fabricated, and electrical power output under irradiation from an 8.5GBq P33 source was monitored over a period of four half-lives of the radioisotope. The open-circuit voltage (VOC) of the device was 2.04±0.02V, and the peak power (Pout) was 0.58±0.02μW (2.1±0.2μW∕cm2) at 1.60V. The conversion efficiency (ηconv) was 4.5%±0.3% and the normalized power output indicates no device degradation over more than 3months (four half-lives of the source).