V. Krishnamoorthy - Concepedia

Author

V. Krishnamoorthy

Also Known As

Krishnamoorthy Venkatsubramanian, Krishnamoorthy. V, V Krishnamoorthy, V. KRISHNAMOORTHY, V. Krishnamoorthy, Venkat Krishnamoorthy, Venkatasubramanian K., Venkatasubramanian Krishnamoorthy

Publications

853

Citations

H-Index

Concepts

All Affiliations

University of Florida Eaton (United States)HRL Laboratories (United States)Cornell University

About

V. Krishnamoorthy is an author at University of Florida specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	751
2	Applied Physics	14	17	597
3	Electrical Engineering	6	6	328
4	Computer Engineering	1	1	12
5	Computer Science	1	1	12

V. Krishnamoorthy

Publications

751

Citations

H-Index

Page 1

	Year	Citations
Demonstration of a radiation resistant, high efficiency SiC betavoltaic C. J. Eiting, V. Krishnamoorthy, S. Rodgers, Applied Physics Letters Electrical EngineeringEngineeringP33 SourceHigh Voltage EngineeringPower Device	2006	142
Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs J. W. Johnson, R. Mehandru, B. Luo, physica status solidi (a) Materials ScienceOxide HeterostructuresElectrical EngineeringWide-bandgap SemiconductorEngineering	2001	87
Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (&lt;104/cm2) In<i>x</i>Ga1−<i>x</i>As (<i>x</i>≤0.5) on GaAs V. Krishnamoorthy, Yue Lin, R. M. Park Journal of Applied Physics EngineeringSemiconductorsIi-vi SemiconductorQuantum MaterialsMolecular Beam Epitaxy	1992	54
Diffusion of ion implanted boron in preamorphized silicon K. S. Jones, L. H. Zhang, V. Krishnamoorthy, Applied Physics Letters Materials ScienceIon ImplantationBoron NitrideEngineeringBoron Distribution	1996	51
Residual strain analysis of In<i>x</i>Ga1−<i>x</i>As/GaAs heteroepitaxial layers V. Krishnamoorthy, Yue Lin, L. C. Calhoun, Applied Physics Letters SemiconductorsMaterials EngineeringMaterials ScienceEngineeringLattice Relaxation	1992	49
Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension M. J. Matragrano, D. G. Ast, J. R. Shealy, Journal of Applied Physics Gainp Epitaxial LayersEngineeringSemiconductorsMechanicsCompression (Physics)	1996	48
Strain relief study concerning the In<i>x</i>Ga1−<i>x</i>As/GaAs (0.07&lt;<i>x</i>&lt;0.5) material system V. Krishnamoorthy, P. R. F. Ribas, R. M. Park Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductorsStrain Relief StudyQuantum Materials	1991	46
Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon K. S. Jones, J. Liu, Limin Zhang, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials EngineeringEngineeringDislocation InteractionCrystalline DefectsPhysics	1995	39
Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy P. R. F. Ribas, V. Krishnamoorthy, R. M. Park Applied Physics Letters SemiconductorsLuminescence PeakElectrical EngineeringElectronic DevicesEngineering	1990	33
The effect of boron implant energy on transient enhanced diffusion in silicon J. Liu, V. Krishnamoorthy, H.-J.L. Gossman, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringBoron Implant EnergyBoron Spikes	1997	33

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