V. Krishnamoorthy

Demonstration of a radiation resistant, high efficiency SiC betavoltaic

C. J. Eiting, V. Krishnamoorthy, S. Rodgers et al. · Applied Physics Letters · 2006 · 142 citations

Electrical Engineering, Engineering, P33 Source +10

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

J. W. Johnson, R. Mehandru, B. Luo et al. · physica status solidi (a) · 2001 · 87 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +11

Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (&amp;lt;104/cm2) In<i>x</i>Ga1−<i>x</i>As (<i>x</i>≤0.5) on GaAs

V. Krishnamoorthy, Yue Lin, R. M. Park · Journal of Applied Physics · 1992 · 54 citations

Engineering, Semiconductors, Ii-vi Semiconductor +17

Diffusion of ion implanted boron in preamorphized silicon

K. S. Jones, L. H. Zhang, V. Krishnamoorthy et al. · Applied Physics Letters · 1996 · 51 citations

Materials Science, Ion Implantation, Boron Nitride +11

Residual strain analysis of In<i>x</i>Ga1−<i>x</i>As/GaAs heteroepitaxial layers

V. Krishnamoorthy, Yue Lin, L. C. Calhoun et al. · Applied Physics Letters · 1992 · 49 citations

Semiconductors, Materials Engineering, Materials Science +12