L. H. Zhang

Publications

173

Citations

H-Index

1995

Active since

Affiliations

National Institute of Standards and Technology(Current)

University of Florida

L. H. Zhang is an author at National Institute of Standards and Technology specializing in applied physics, crystalline defects, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceCrystalline DefectsPhysicsMicrostructureSemiconductorsSurface ScienceIntegrated CircuitsElectronic Packaging

Publications per year

1995–1996

Publications

Transient enhanced diffusion without {311} defects in low energy B+-implanted silicon

L. H. Zhang, K. S. Jones, P. H. et al. · Applied Physics Letters · 1995 · 122 citations

Engineering, Transmission Electron Microscopy, Integrated Circuits +16

Diffusion of ion implanted boron in preamorphized silicon

K. S. Jones, L. H. Zhang, V. Krishnamoorthy et al. · Applied Physics Letters · 1996 · 51 citations

Materials Science, Ion Implantation, Boron Nitride +11

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