D. G. Ast

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, G. P. Watson, R.E. Proano et al. · Journal of Applied Physics · 1989 · 312 citations

Engineering, Materials Engineering, Materials Science +17

Development and electrical properties of undoped polycrystalline silicon thin-film transistors

R.E. Proano, R.S. Misage, D. G. Ast · IEEE Transactions on Electron Devices · 1989 · 247 citations

Engineering, Electrical Engineering, Materials Science +17

Amorphous-to-Quasicrystalline Transformation in the Solid State

D. A. Lilienfeld, M. Nastasi, H. H. Johnson et al. · Physical Review Letters · 1985 · 172 citations

Natural Sciences, Materials Science, Physics +17

Structure and recombination in InGaAs/GaAs heterostructures

Eugene A. Fitzgerald, D. G. Ast, P. D. Kirchner et al. · Journal of Applied Physics · 1988 · 167 citations

Engineering, Materials Engineering, Materials Science +17

The structure of second and third order twin boundaries in silicon

Mark D. Vaudin, B. Cunningham, D. G. Ast · Scripta Metallurgica · 1983 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +7