Publication | Closed Access
Amorphous-to-Quasicrystalline Transformation in the Solid State
172
Citations
16
References
1985
Year
EngineeringSolid-state ChemistryIcosahedral Diffraction LinesSolid StateAmorphous MaterialsIon ImplantationRoom-temperature Ion-beam IrradiationThin Film ProcessingMaterials SciencePhysicsCrystalline DefectsQuasicrystalline Electron DiffractionCrystallographyMicrostructureMaterial AnalysisCondensed Matter PhysicsApplied PhysicsThin FilmsAmorphous Solid
${\mathrm{Al}}_{84}$${\mathrm{Mn}}_{16}$ multilayer films have been amorphized by room-temperature ion-beam irradiation. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion-beam-assisted thermal. The intensity of the quasicrystalline electron diffraction increases continuously with annealing between 270 and 350 \ifmmode^\circ\else\textdegree\fi{}C. Ion irradiation of the amorphous phase produces a more complete set of icosahedral diffraction lines than thermal annealing.
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