M. Angyal

Electroless copper deposition for ULSI

Yosi Shacham‐Diamand, Valery M. Dubin, M. Angyal · Thin Solid Films · 1995 · 222 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

High Performance 0.20, Engineering, Vlsi Design +19

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

E. Leobandung, H. Nayakama, D. Mocuta et al. · 2005 · 65 citations

Electrical Engineering, Engineering, Vlsi Design +15

Electromigration in Cu(Al) and Cu(Mn) damascene lines

Chunhua Hu, J. Ohm, Lynne Gignac et al. · Journal of Applied Physics · 2012 · 54 citations

Materials Science, Em Lifetimes, Electrical Engineering +9

Performance of tantalum-silicon-nitride diffusion barriers between copper and silicon dioxide

M. Angyal, Yosi Shacham‐Diamand, J.S. Reid et al. · Applied Physics Letters · 1995 · 46 citations

Engineering, 10-Nm-thick Tantalum-silicon-nitride, Thermal Silicon Dioxide +16