B. Boeck

Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM

E. Gerritsen, N. Emonet, C. Caillat et al. · Solid-State Electronics · 2005 · 99 citations

Engineering, Materials Engineering, Materials Science +12

Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies

A. Berthelot, C. Caillat, V. Huard et al. · Proceedings of the European Solid State Device Research Conference · 2006 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

A high density 0.10 μm CMOS technology using low K dielectric and copper interconnect

Shivendra Singh Parihar, M. Angyal, B. Boeck et al. · 2002 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +17

Optical properties of titanium nitride thin films

Harland G. Tompkins, R. B. Gregory, B. Boeck · Surface and Interface Analysis · 1991 · 13 citations

Natural Sciences, Materials Engineering, Materials Science +17

A high performance 1.5 V, 0.10 μm gate length CMOS technology with scaled copper metallization

P. Gilbert, I. Yang, C. Pettinato et al. · 2002 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17